Thin film transistor array panel

Details Thin film transistor array panel Thin film transistor array panel

2005-06-28

2005-06-28

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S347000

Reexamination Certificate

active

06911669

ABSTRACT:
A method of forming a thin film transistor array panel is described. The thin film transistor array comprises a substrate, a plurality of scan lines, a plurality of gates a plurality of first bonding pads and a plurality of second bonding pads, wherein the first bonding pads are connected with the scan lines. The first bonding pads and the second bonding pads are formed as a part of the first metal layer. The data lines are extended to electrically connected with the second bonding pads via contact windows.

REFERENCES:
patent: 6204081 (2001-03-01), Kim et al.
patent: 6590226 (2003-07-01), Kong et al.
patent: 6656776 (2003-12-01), Kim et al.

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