Thin film transistor array having a static electricity preventin

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 72, 257350, 349139, 349140, 349149, 349152, H01L 2904, H01L 31036, H01L 310376

Patent

active

059090359

ABSTRACT:
A thin film transistor array and method of manufacture includes a substrate, a plurality of scanning lines formed in a first direction on the substrate, a plurality of data lines formed in a second direction on the substrate such that each data line crosses the scanning lines, a pixel electrode formed at each cross-over portion between the scanning and data lines, and a thin film transistor also formed at each cross-over portion. Each thin film transistor has an input electrode connected to one of the data lines, an output electrode connected to the pixel electrode formed at the cross-over portion, and a control electrode connected to one of the scanning lines. The array further includes a gate short line, which receives a scanning voltage applied to the scanning lines, and a data short line, which receives a first voltage. A first static electricity prevention circuit is associated with each scanning line, and is connected between the associated scanning line and the gate short line. A second static electricity prevention circuit is associated with each data line, and is connected between the associated data line and the data short line.

REFERENCES:
patent: 5068748 (1991-11-01), Ukai et al.
patent: 5497146 (1996-03-01), Hebiguchi
patent: 5504348 (1996-04-01), Yoshida et al.
patent: 5668032 (1997-09-01), Holmberg et al.
patent: 5798534 (1998-08-01), Young

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