Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-06-08
2000-09-19
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 257348, 257349, 257350, 257351, 257352, 257353, 257354, 257355, H01L 2900
Patent
active
061216321
ABSTRACT:
A high-quality thin-film transistor array. The gate insulating film below the pixel electrode is etched off in its entirely or along a slit extending along a drain bus line in order to simultaneously remove the residual a-Si produced due to defective patterning. The insulating film is interposed between a drain bus line and a pixel electrode to form a boundary separating layer therebetween. The reject ratio is suppressed by reducing the occurrence of point defects of semi-bright spots, ascribable to capacitative coupling to the pixel electrodes as a result of interconnection of the residual a-Si produced by defective patterning to the drain bus line.
REFERENCES:
patent: 5428250 (1995-06-01), Ikeda et al.
patent: 5731216 (1998-03-01), Holmberg et al.
patent: 5889573 (1999-03-01), Yamamoto et al.
Ohi Susumu
Taguchi Naoyuki
Abraham Fetsum
NEC Corporation
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