Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-03-20
1996-04-02
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257363, 359 54, 359 59, H01L 2904
Patent
active
055043488
ABSTRACT:
A thin film transistor array comprises an insulative substrate, a plurality of pixel electrodes arranged in a matrix on the insulative substrate, a plurality of thin film transistors connected respectively to the pixel electrodes, a plurality of address lines formed on the insulative substrate, each address line being connected to a plurality of control electrodes of the thin film transistors, and a plurality of data lines arranged on the insulative substrate in such a manner as to intersect the address lines, each data line being connected to a plurality of data input electrodes of the thin film transistors. A short-wiring is formed on the outside of a display region on the insulative substrate on which the pixel electrodes are arranged, and the short-wiring is connected to at least two of the address lines and the data lines by a two-terminal element having non-linear resistance characteristics defining voltage/current characteristics on the basis of a space charge limited current.
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Nomoto Tsutomu
Okimoto Hiroyuki
Sasaki Makoto
Sato Shun'ichi
Yoshida Mamoru
Bowers Courtney A.
Casio Computer Co. Ltd.
Crane Sara W.
OKI Electric Industry Co., Ltd.
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