Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-01-15
2008-01-15
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S066000, C257S072000, C438S149000
Reexamination Certificate
active
11163814
ABSTRACT:
A thin film transistor array substrate and a manufacturing method thereof are provided. Wherein, scan lines and data lines are disposed on a substrate to define a plurality of pixel regions. Thin film transistors are disposed in the pixel regions correspondingly and driven by the scan lines and the data lines. Pixel electrodes are disposed in the pixel regions respectively and electrically connected to the corresponding thin film transistors. In addition, a gate insulating layer is disposed on the substrate to cover the scan lines and gates of the thin film transistors. A patterned leaning layer is disposed on the gate insulating layer and forms a plurality of non-continuous patterns under the data lines. The non-continuous patterns expose portions of the gate insulating layer under the data lines to which a portion of each data line can be directly attached.
REFERENCES:
patent: 5952675 (1999-09-01), Katoh
patent: 6678017 (2004-01-01), Shimomaki et al.
Chen Hsiao-Fen
Liou Meng-Chi
Chunghwa Picture Tubes Ltd.
Jianq Chyun IP Office
Lee Hsien-Ming
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