Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-11-27
1997-09-30
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 66, 257408, 359 59, 359 88, H01L 29786
Patent
active
056728883
ABSTRACT:
An active layer is sandwiched between a first gate electrode and a second gate electrode, and an offset region is disposed in overlying and underlying relation to a third gate electrode and a fourth gate electrode, respectively, resulting in a double-gate structure that is effective to produce a large ON current and a low leakage current. Storage capacitances for suppressing a reduction in a pixel potential are formed between a transparent pixel electrode and a third storage capacitance electrode, between the third storage capacitance electrode and a second storage capacitance electrode, and between the second storage capacitance electrode and a first storage capacitance electrode. Large storage capacitances are thus formed in a small area.
REFERENCES:
patent: 4759610 (1988-07-01), Yanagisawa
patent: 5308998 (1994-05-01), Yamazaki et al.
English language Abstract corresponding to Japanese Unexamined Patent Publication No. 4-415, Jan. 1992.
E. Takeda et al., "An Amorphous Si TFT Array with TaOx/SiNx Double Layered Insulator For Liquid Crystal Displays", 1988 International Display Research Conference, pp. 155-158.
Guay John F.
Jackson Jerome
NEC Corporation
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