Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-03-17
1994-05-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 64, 257 65, 257 70, 257347, H01L 2904, H01L 31036, H01L 2912, H01L 2701
Patent
active
053130766
ABSTRACT:
A semiconductor material and a method for forming the same, the semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, the semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
REFERENCES:
patent: 4727044 (1988-02-01), Yamazaki
patent: 5091334 (1992-02-01), Yamazaki et al.
Kusumoto Naoto
Takemura Yasuhiko
Yamazaki Shunpei
Zhang Hongyong
Hille Rolf
Loke Steven
Semiconductor Energy Laboratory Co,. Ltd.
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