Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-03-17
2011-11-22
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S072000, C257S088000, C257S091000, C257SE23169, C257SE29270, C257SE29147
Reexamination Certificate
active
08063403
ABSTRACT:
An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film formation but in a layer with high crystallinity which is formed later in a microcrystalline semiconductor film. Further, the layer including an impurity element is used as a channel formation region. Furthermore, a layer which does not include an impurity element imparting one conductivity type or a layer which has an impurity element imparting one conductivity type at an extremely lower concentration than other layers, is provided between a pair of semiconductor films including an impurity element functioning as a source region and a drain region and the layer including an impurity element functioning as a channel formation region.
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Kim et al., “Depletion-mode a-Si:H TFT and its application to AMOLED,” AM-FPD '08 Digest of Technical Papers, Jul. 2, 2008, pp. 279-282, the Japan Society of Applied Physics.
Godo Hiromichi
Miyairi Hidekazu
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Sefer A.
Semiconductor Energy Laboratory Co,. Ltd.
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