Thin film transistor and process for producing the same

Details Thin film transistor and process for producing the same Thin film transistor and process for producing the same

1993-09-28

1995-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 42, 437 41, 437 29, 437 62, H01L 21302, H01L 213065

Patent

active

054222877

ABSTRACT:
A thin film transistor and a process for producing the same and improvements in an interfacial property between a semiconductor layer and an insulating layer and a leak current.
The thin film transistor according to the present invention consists of a semiconductor formed on an insulating substrate, a source region and a drain region formed respectively at both sides of the semiconductor layer, a field oxide film formed at side ends of the source and the drain, a gate oxide film and an oxidation protective film formed, in sequence, on the surface between the source region and the drain region, a gate arranged at a predetermined interval from the ends of the source region and the drain region on the oxidation protective film, an insulating film having contact holes for the gate, the source region and the drain region, and an electrode formed over the contact holes.

REFERENCES:
patent: 4104087 (1978-08-01), Ipri et al.
patent: 4192059 (1980-03-01), Khan et al.
patent: 4466172 (1984-08-01), Batra

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