Thin film transistor and organic electroluminescence display...

Details Thin film transistor and organic electroluminescence display... Thin film transistor and organic electroluminescence display...

2007-09-04

2007-09-04

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S344000, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000

Reexamination Certificate

active

11095601

ABSTRACT:
A thin film transistor (TFT) having a lightly doped drain (LDD) structure includes a lightly doped drain (LDD) region formation pattern, an active layer formed in an uneven structure on the LDD region formation pattern, and having a source region and a drain region having an LDD region. A gate electrode may be formed on a gate insulating layer, and source and drain electrodes are coupled to the source and drain regions.

REFERENCES:
patent: 5585647 (1996-12-01), Nakajima et al.
patent: 5821565 (1998-10-01), Matsuzaki et al.
patent: 6563136 (2003-05-01), Kunii
patent: 6835586 (2004-12-01), Yamazaki et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 2004/0206956 (2004-10-01), Yanai et al.

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