Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2004-10-07
2008-09-23
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE21387, C438S158000, C438S151000, C438S149000
Reexamination Certificate
active
07427776
ABSTRACT:
A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.
REFERENCES:
patent: 3442647 (1969-05-01), Hendrik
patent: 4411981 (1983-10-01), Minezaki
patent: 4425572 (1984-01-01), Takafuji
patent: 5407602 (1995-04-01), Cava
patent: 5744864 (1998-04-01), Cillessen
patent: 5817550 (1998-10-01), Carey et al.
patent: 5949107 (1999-09-01), Zhang
patent: 6225149 (2001-05-01), Gan et al.
patent: 6329226 (2001-12-01), Jones et al.
patent: 6407786 (2002-06-01), Yamamoto et al.
patent: 6486009 (2002-11-01), Yang et al.
patent: 6597015 (2003-07-01), Yang et al.
patent: 6614052 (2003-09-01), Zhang
patent: 6642085 (2003-11-01), Wolfe et al.
patent: 6677191 (2004-01-01), Battersby
patent: 6707513 (2004-03-01), Tsujimura et al.
patent: 7145174 (2006-12-01), Chiang et al.
patent: 2002/0125437 (2002-09-01), Izumi et al.
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2004/0016926 (2004-01-01), Wolfe et al.
patent: 2004/0038446 (2004-02-01), Takeda et al.
patent: 2004/0056273 (2004-03-01), Nause et al.
patent: 2004/0077133 (2004-04-01), Battersby
patent: 2004/0105041 (2004-06-01), Tsujimura et al.
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 2004/0155846 (2004-08-01), Hoffman
patent: 2004/0165121 (2004-08-01), Tsujimura et al.
patent: 2005/0127354 (2005-06-01), Hanna et al.
patent: 2005/0173734 (2005-08-01), Yoshioka
Nomura; “Thin-film Transistor Fabricated in Single-Crystalline Transparent . . . ”, Science, American Assoc for the advancement of Science, vol. 300, May 23, 2003, pp. 1269-1272.
Wager, “Transparent Electronics”, Science, vol. 300, May 23, 2003, pp. 1245-1246.
Minami; “Transparent and Conductive Multicomponent Oxide Films . . . ”, Journal of Vacuum Science & Tech A, vol. 17, No. 4, Jul. 1999, pp. 1765-1772.
Dehuff; “Transparent thin-film transistors with zinc indium oxide channel layer”, Journal of Applied Physics, vol. 97, No. 6, Mar. 11, 2005, pp. 64505-1-64505-5.
F. Lemmi et al., “High-Performance TFTs Fabricated on Plastic Substrates,” IEEE Electron Device Letters, V. 25 No. 7 (Jul. 2004), pp. 486-488.
S. H. Won et al, “Hydrogenated Amorphous Silicon Thin-Film Transistor on Plastic With An Organic Gate Insulator,” IEEE Electron Device Letters, V. 25 No. 3 (Mar. 2004), pp. 132-134.
X. Duan et al., “High-performance thin-film transistors using semiconductor nanowires and nanoribbons,” Nature, V. 425 (Sep. 18, 2003), pp. 274-278.
E. Fortunato (CENIMAT, Portugal), “Invisible Electronics: Thin Film Transistors based on Nanocrystalline ZnO” in “State of the Art in the amorphous and nanocrystalline research” date unknown [website of 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 21) scheduled for Sep. 4-9, 2005 in Lisbon, Portugal]: http://eventos.fct.unl.pt/ICANS21/mainpage/state—doc/Invisible%20Bectronics—fortunato.pdf.
Feng Yuan Gan et al., “Thin film transistors wit anodic gate dielectrics and chemical bath deposited active layers,” Journal of Vacuum Science and Technology, vol. 20/4 (Jul. 2002), pp. 1365-1368.
H-C. Lin et al. “A Novel Thin-Film Transistor with Self-Aligned Field Induced Drain,” IEEE Electron Device Letters, V. 22 No. 1 (Jan. 2001), pp. 26-28.
T. Arai et al., “Aluminium-based gate structure for active-matrix liquid crystal displays,” IBM J. Research and Development, vol. 42 Nos. 3/4 (1998) pp. 491-500.
S. D. Theiss et al. “Polysilicon Thin Film Transistors Fabricated at 100° C. on a Flexible Plastic Substrate ,” International Electron Devices Meeting (IEDM) (1998), pp. 257-260 (10.3.1-10.3.4).
Fang-Chen Luo, “TFT fabrication by anodization or plasma oxidation,” Xerox Disclosure Journal, vol. 9, No. 4 (Jul./Aug. 1984) p. 233-23.
Author unknown, Lawrence Livermore National Laboratories IPAC, “Silicon Transistor Fabrication on Plastic Substrates,” Nov. 2001 (downloaded Sep. 30, 2004): http://www.llnl.gov/IPandC/technology/profile/chemistrymaterial/SiliconTransistorFabrication/index. php.
Chiang Hai
Hoffman Randy
Mardilovich Peter
Chiu Tsz K
Hewlett--Packard Development Company, L.P.
Wilczewski M.
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