Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

2011-04-12

2011-04-12

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S043000, C257SE21411, C257SE29296, C438S151000

Reexamination Certificate

active

07923735

ABSTRACT:
A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.

REFERENCES:
patent: 2007/0103055 (2007-05-01), Tomai et al.
patent: 2007/0252147 (2007-11-01), Kim et al.
patent: 2009/0166616 (2009-07-01), Uchiyama
patent: 2004-273614 (2004-09-01), None
patent: 2007-250982 (2007-09-01), None
patent: 2007-305658 (2007-11-01), None
patent: 10-2007-0035373 (2007-03-01), None
patent: 10-2008-0073944 (2008-08-01), None
patent: WO 2007/108293 (2007-09-01), None

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