Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-04-02
2011-10-04
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S072000, C257S547000, C257SE21414, C257SE29147
Reexamination Certificate
active
08030654
ABSTRACT:
A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNxor SiOxNythrough which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.
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Liang Ke
Rim Seung Moo
Xue Jianshe
Beijing Boe Optoelectronics Technology Co., Ltd.
Lam Cathy N
Nguyen Cuong Q
Sheridan & Ross P.C.
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