Thin film transistor and method of manufacturing the same

Details Thin film transistor and method of manufacturing the same Thin film transistor and method of manufacturing the same

1996-11-18

1999-05-11

Bowers, Charles

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257349, 257 59, 438159, 438151, H01L29/04;31/036;31/0376;31/20

Patent

active

059030135

ABSTRACT:
A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.

REFERENCES:
patent: 5430320 (1995-07-01), Lee
patent: 5432102 (1995-07-01), Cho et al.
patent: 5470776 (1995-11-01), Ryou
patent: 5612234 (1997-03-01), Ha
patent: 5766988 (1998-06-01), Cho et al.
C.T. Liu et al., High Reliability and High Performance 0.35.mu.m Gate-Inverted TFT's for 16Mbit SRAM Applications Using Self-Aligned LDD.

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