Thin film transistor and method of making the same

Details Thin film transistor and method of making the same Thin film transistor and method of making the same

1993-06-23

1995-03-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257347, 257351, 257369, 257401, H01L 2701, H01L 2712, H01L 2702

Patent

active

053960831

ABSTRACT:
A thin film transistor and a method of making the same. The TFT comprises: an insulation substrate; a first TFT, the first TFT including a first source electrode and a first drain electrode formed on the insulation substrate, a first active layer formed so that it is contacted with the first source electrode and the first drain electrode and a common gate electrode formed through an insulation layer on the first source electrode, the first drain electrode and the first active layer; and a second TFT, the second TFT including the common gate electrode, a second active layer formed through an insulation layer on the common gate electrode, a second source electrode and a second drain electrode formed on the second active layer and be contacted with the first source electrode and the first drain electrode at a portion thereof.

REFERENCES:
patent: 4272880 (1981-06-01), Pashley

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