Thin film transistor and method of making the same

Details Thin film transistor and method of making the same Thin film transistor and method of making the same

1995-01-23

1997-01-28

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, 257411, H01L 2904

Patent

active

055980112

ABSTRACT:
A thin film transistor and a method of making the same, capable of reducing the step height between an insulating substrate and a gate electrode upon the anodization and thus preventing a short circuit at overlapping portions of the gate electrode and source/drain electrodes. The thin film transistor comprises a first metal layer as a gate electrode formed on an insulating substrate, an anodizable second metal layer having a line width larger than that of the first metal layer so as to cover the first metal layer, and an anodized film as a first gate insulating film formed by anodizing the second metal layer. The gate electrode and the anodized film serve as a gate insulating film. The gate insulating film can be also provided by forming a metal layer with a proper thickness over the insulating substrate, primarily anodizing a portion of the metal layer, forming a gate pattern forming layer over the anodized metal layer portion, and secondarily anodizing the metal layer except for its portion disposed beneath the gate pattern forming layer, to form a gate electrode. The anodized films are used as the gate insulating film.

REFERENCES:
patent: 5034340 (1991-07-01), Tanaka et al.
patent: 5102813 (1992-04-01), Kobayashi et al.
patent: 5120667 (1992-06-01), Torui et al.
patent: 5231039 (1993-07-01), Sakono et al.
patent: 5240869 (1993-08-01), Nakatani
patent: 5266825 (1993-11-01), Tsukada et al.
patent: 5340999 (1994-08-01), Takeda et al.

Affiliated with

Also associated with

Rating

Thin film transistor and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and method of making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-942867