Thin film transistor and method of forming thin film transistor

Details Thin film transistor and method of forming thin film transistor Thin film transistor and method of forming thin film transistor

2005-12-07

2008-03-25

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S184000, C257S257000, C257S290000, C257S443000, C257SE27112

Reexamination Certificate

active

07348609

ABSTRACT:
The thin film transistor has a non-transparent structure besides and insulated with the gate. Hence, the light transmitted from the substrate is blocked and the light current induced in the thin film transistor is negligible. The method uses a mask with a slit pattern to form a non-uniform photoresist. Hence, the mask could be used to pattern two conductor layers for forming source/drain/channel.

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K. Ono, “A Simplified 4 Photo-mask Process for 24 cm Diagonal TFT-LCDs,” Asia Dispaly '95, 1995, p. 693.
Chang W. Han et al., A TFT Manufactured by 4 Masks Process with New Photolithography, Asia Dipslay '98, 1998, p. 1109.

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