Thin film transistor and method of forming the same

Details Thin film transistor and method of forming the same Thin film transistor and method of forming the same

2005-07-05

2008-08-05

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S059000, C257S066000, C257S072000, C257S347000, C257S291000, C257S292000, C257S439000, C257S443000, C257S213000, C257S413000, C438S149000, C438S135000, C438S142000

Reexamination Certificate

active

07408190

ABSTRACT:
A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.

REFERENCES:
patent: 2002/0047947 (2002-04-01), Hur et al.
patent: 2002/0119586 (2002-08-01), Kido
patent: 2003/0036221 (2003-02-01), Song et al.
patent: 2005/0024519 (2005-02-01), Nishida et al.
patent: 2005/0024549 (2005-02-01), Gotoh et al.
patent: 2000-284326 (1999-03-01), None

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