Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-31
1996-08-06
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 65, H01L 2976, H01L 31036, H01L 31112, H01L 2904
Patent
active
055436358
ABSTRACT:
An under-gated thin film transistor (54) having low leakage current and a high on/off current ratio is formed using a composite layer (40) of semiconducting material. In one embodiment a composite layer (40) of semiconducting layer is formed by depositing two distinct layers (34, 38) of semiconducting material over the transistor gate electrode (18). The composite layer (40) is then patterned and implanted with ions to form a source region (46) and a drain region (48) within the composite layer (40), and to define a channel region (50) and an offset drain region (52) within the composite layer (40).
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Hayden James D.
McNelly Thomas F.
Nguyen Bich-Yen
Tobin Philip J.
Cooper Kent J.
Meier Stephen
Motorola Inc.
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