Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2009-12-03

2011-10-25

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S009000, C257S014000, C257S024000, C257S327000, C257SE51040, C977S732000, C977S742000, C977S762000

Reexamination Certificate

active

08044391

ABSTRACT:
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

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Office Action issued in corresponding Japanese Patent Application No. 2006-104958; mailed May 10, 2010.
Yu, D.P. et al., “Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation” Applied Physics Letters, vol. 72 No. 26, 3458-3460.
First Notification of Office Action issued in corresponding Chinese Patent Application No. 200610072572.6; issued Mar. 7, 2008.
Office Action issued in corresponding Korean Patent Application No. 10-2005-0029121, mailed Jun. 17, 2011.

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