Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2005-08-01

2008-03-25

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S759000, C257S059000, C257S066000, C257SE29151, C257SE51005, C438S082000, C438S099000

Reexamination Certificate

active

07348593

ABSTRACT:
An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, an adhesive layer formed on the gate insulating layer, source/drain electrodes formed on the adhesive layer, and a semiconductor layer formed on the source/drain electrodes and on the adhesive layer. The gate insulating layer and the semiconductor layer are organic, the adhesive layer providing adhesion between the source/drain electrodes and the gate insulating film while preventing gate leakage current while also improving contact resistance.

REFERENCES:
patent: 2002/0117691 (2002-08-01), Choi et al.
patent: 2003/0047729 (2003-03-01), Hirai et al.
patent: 2005/0156161 (2005-07-01), Hanna et al.
patent: 2006/0269849 (2006-11-01), Lee
patent: 2007/0069210 (2007-03-01), Yamazaki et al.
patent: 10-2003-0016981 (2003-03-01), None
patent: 10-2004-0067047 (2004-07-01), None
patent: WO2005/047967 (2005-05-01), None

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