Thin-film transistor and method of fabricating the same

Details Thin-film transistor and method of fabricating the same Thin-film transistor and method of fabricating the same

1988-07-22

1989-09-05

James, Andrew J.

357 2, 357 4, H01L 2978

Patent

active

048643769

ABSTRACT:
A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.

REFERENCES:
patent: 3616527 (1971-11-01), Janning
patent: 4502204 (1985-03-01), Togashi et al.
patent: 4558340 (1985-12-01), Schachter et al.
patent: 4733284 (1988-03-01), Aoki
patent: 4746628 (1988-05-01), Takafuji et al.

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