Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2004-07-22
2008-12-16
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S192000, C257SE51027
Reexamination Certificate
active
07465955
ABSTRACT:
A thin film transistor of the present invention is a thin film transistor (100) having a semiconductor layer (14), a source region (15) and a drain region (16) provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has π-conjugated organic semiconductor molecules as its main component. The π-conjugated organic semiconductor molecules are oriented so that π orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.
REFERENCES:
patent: 5500537 (1996-03-01), Tsumura et al.
patent: 6107117 (2000-08-01), Bao et al.
patent: 5-275695 (1993-10-01), None
patent: 7-206599 (1995-08-01), None
patent: 9-83040 (1997-03-01), None
patent: 9-116163 (1997-05-01), None
patent: 10-190001 (1998-07-01), None
patent: 2001-94107 (2001-04-01), None
patent: 2002-9290 (2002-01-01), None
patent: 2002-270621 (2002-09-01), None
patent: 2002-309013 (2002-10-01), None
patent: 2003-502874 (2003-01-01), None
patent: WO 00/79617 (2000-12-01), None
Nanai Norishige
Takeuchi Takayuki
McDermott Will & Emery LLP
Panasonic Corporation
Pham Hoai V
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