Thin-film transistor and method of fabricating same

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S192000, C257SE51027

Reexamination Certificate

active

07465955

ABSTRACT:
A thin film transistor of the present invention is a thin film transistor (100) having a semiconductor layer (14), a source region (15) and a drain region (16) provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has π-conjugated organic semiconductor molecules as its main component. The π-conjugated organic semiconductor molecules are oriented so that π orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.

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patent: 6107117 (2000-08-01), Bao et al.
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patent: 2002-9290 (2002-01-01), None
patent: 2002-270621 (2002-09-01), None
patent: 2002-309013 (2002-10-01), None
patent: 2003-502874 (2003-01-01), None
patent: WO 00/79617 (2000-12-01), None

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