Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-07-22
1996-06-18
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257302, 257401, 437225, H01L 2976, H01L 21302
Patent
active
055280536
ABSTRACT:
A thin-film transistor has a doped polysilicon layer arranged at the surface of a substrate and has a polysilicon structure arranged on the doped polysilicon layer that is doped with the opposite conductivity type and that is limited by a sidewall is provided. The polysilicon structure has a source/drain region that is doped with the conductivity type of the doped polysilicon layer. A gate dielectric and a gate electrode thereon are arranged on the sidewall of the polysilicon structure between source/drain region and polysilicon layer, which likewise acts as source/drain region.
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patent: 5136350 (1992-08-01), Itoh
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"A Half Micron SRAM Cell Using a Double-Gated Self-Aligned Polysilicon PMOS Thin Film Transistor (TFT) Load", by A. O. Adan, etal. Integrated Cir.Group.Corp. 1990 Sym on VLSI Tech. pp. 19-20.
Prenty Mark V.
Siemens Aktiengesellschaft
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