Thin film transistor and method for producing the same

Details Thin film transistor and method for producing the same Thin film transistor and method for producing the same

2011-08-30

2011-08-30

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S197000, C438S216000, C257S040000, C257S288000, C257S410000, C257SE51005, C257SE51007

Reexamination Certificate

active

08008115

ABSTRACT:
The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

REFERENCES:
patent: 7776662 (2010-08-01), Wang et al.
patent: 2006216718 (2006-08-01), None

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