Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-05-07
1999-09-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257352, 257353, H01L 2976, H01L 31036, H01L 31112
Patent
active
059526777
ABSTRACT:
A thin film transistor (TFT) and a method for manufacturing the same suitable for improving device characteristics by using a self-align technology are disclosed, the TFT including a substrate; a gate electrode having first and second sides on the substrate; a first conductive layer pattern formed on the substrate, wherein between the first conductive layer pattern and the first side of the gate electrode is a sidewall spacer; the sidewall spacer; a second conductive layer pattern formed on the substrate to be connected to the first conductive layer pattern; a gate insulating layer formed on the gate electrode; an active layer formed on the gate insulating layer, the sidewall spacer, the first conductive layer pattern, and the substrate; a source region formed in the active layer at the second side of the gate electrode; and a drain region formed on the active layer on the first conductive layer pattern.
REFERENCES:
patent: 5179033 (1993-01-01), Adan
patent: 5438540 (1995-08-01), Kim
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5723878 (1998-03-01), Yanai
patent: 5818070 (1998-10-01), Yamazaki et al.
Ikeda et al. (1990) Int'l. Electron Devices meeting, Dec. 9-12, 1990, A Polysilicon Transistor Technology for Large Capacity SRAMs, pp. 18. 1.1-18.1.4.
LG Semicon Co. Ltd.
Ngo Ngan V.
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