Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-11-05
1998-10-06
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
058180672
ABSTRACT:
This invention relates to thin film transistors having a sloped drain region suitable for high integrated elements and the method for fabricating the same. The thin film transistor comprising a substrate, a gate pole formed on the central part of the substrate, a semiconductor layer formed to surround the gate pole on the substrate, a side wall spacer formed at one side of the gate pole on the semiconductor layer, and high density impurity regions formed in the semiconductor layer on both sides of the gate pole. The method for fabricating a TFT comprising steps for forming a gate pole on the central part of a substrate, forming a gate insulation film and a semiconductor layer successively on all over the surface of the substrate, forming a side wall spacer only at one side of the gate pole on the semiconductor layer, and forming high density impurity regions in the semiconductor layer on both sides of the gate by ion injecting impurity ions into the semiconductor layer.
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Cheon Young Il
Rha Sa Kyun
LG Semicon Co. Ltd.
Meier Stephen
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