Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-12-03
1999-12-28
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257903, 257330, 257334, H01L 29786
Patent
active
060085053
ABSTRACT:
A thin film transistor includes a substrate with a trench having first and second sides and a bottom, and a gate electrode at one of the first and second sides of the trench. The thin film transistor further includes a gate insulating layer on the entire surface of the substrate including the gate electrode, and an active layer on the gate insulating layer along the trench, the active layer having source and drain regions substantially outside the trench.
REFERENCES:
patent: 5266507 (1993-11-01), Wu
patent: 5298780 (1994-03-01), Harada
patent: 5334862 (1994-08-01), Manning et al.
patent: 5407846 (1995-04-01), Chan
patent: 5418393 (1995-05-01), Hayden
A Polysilicon Transistor Technology for Large Capacity SRAMs, Shuji Ikeda et al., IEDM 90 pp. 469-472 (1990).
Jackson, Jr. Jerome
LG Semicon Co. Ltd.
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