Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-10
2007-04-10
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S191000, C257SE21703, C257SE29137, C438S149000, C438S150000, C438S166000, C438S482000, C438S486000
Reexamination Certificate
active
10989642
ABSTRACT:
A thin film transistor formed by using a Metal Induced Lateral Crystallization process and method for fabricating the same. The thin film transistor comprises an active layer having source/drain regions and a channel region, a gate electrode, an insulating layer having contact holes for exposing a portion of each of the source/drain regions, and a crystallization inducing pattern exposing a portion of the active layer. The source/drain electrodes are coupled to the source/drain regions through the contact holes, and the crystallization inducing pattern does not couple the source/drain regions to the source/drain electrodes.
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Kim Hoon
Lee Ki-Yong
Seo Jin-Wook
Diaz José´ R.
H.C. Park & Associates PLC
Parker Kenneth
Samsung SDI & Co., Ltd.
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