Thin film transistor and manufacturing method thereof...

Details Thin film transistor and manufacturing method thereof... Thin film transistor and manufacturing method thereof...

2007-04-17

2007-04-17

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000, C438S161000, C438S311000, C438S479000, C438S761000, C257SE29273

Reexamination Certificate

active

10711509

ABSTRACT:
A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.

REFERENCES:
patent: 6222214 (2001-04-01), Wuu et al.
patent: 6683333 (2004-01-01), Kazlas et al.
patent: 6737305 (2004-05-01), Lee et al.
patent: 2002/0102781 (2002-08-01), Yang et al.
patent: 2004/0046171 (2004-03-01), Lee et al.

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