Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-07-18
1999-03-30
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 66, H01L 2978, H01L 2712
Patent
active
058892907
ABSTRACT:
A thin film transistor and a simplified manufacturing method thereof, which results in enhanced charge mobility. The thin film transistor includes: a substrate; a gate electrode on said substrate; a gate insulating layer on said substrate and said gate electrode; a doped semiconductor layer, on the gate insulating layer, which is split into a first and second portion; a first metal layer on the first doped semiconductor portion; a second metal layer on the second doped semiconductor portion; and a top semiconductor layer in a gap formed by the first and second metal layer: the first doped semiconductor portion, the second doped semiconductor portion, and the insulating layer.
REFERENCES:
patent: 4778773 (1988-10-01), Sukegawa
patent: 4864376 (1989-09-01), Aoki
patent: 4990981 (1991-02-01), Tanaka et al.
patent: 5021850 (1991-06-01), Tanaka et al.
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 5109260 (1992-04-01), Tanaka et al.
patent: 5198694 (1993-03-01), Kwasnick et al.
patent: 5270567 (1993-12-01), Mori et al.
patent: 5272360 (1993-12-01), Todoroki et al.
patent: 5294811 (1994-03-01), Abyama et al.
patent: 5473168 (1995-12-01), Kawai et al.
LG Electronics Inc.
Monin Donald
LandOfFree
Thin film transistor and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1217012