Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1998-09-28
1999-10-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257 57, 257 66, 257350, 257637, 257640, H01L 2358, H01L 2976, H01L 31036, H01L 31112
Patent
active
059629169
ABSTRACT:
On a transparent substrate, on which is positioned a gate electrode, a silicon nitride film and a silicon oxide film are formed as gate insulating films, and furthermore a polycrystalline silicon film is formed as a semiconductor film to become an active region. A stopper is positioned on the polycrystalline silicon film to correspond to a gate electrode, and a silicon oxide film, a silicon nitride film, and a silicon oxide film are formed as interlayer insulating film so as to cover the stopper. Contact holes are formed in the layer insulating film to correspond to a source region and a drain region, and a source electrode and a drain electrode are positioned through these contact holes. Since the silicon oxide film having a fast etching rate is formed on the silicon nitride film having a slow etching rate, the etching from the silicon oxide film above the silicon nitride film dominates when forming the contact holes in the layer insulating film so that the etched shape of the silicon nitride film assumes a tapered shape widening toward the top.
REFERENCES:
patent: 5130772 (1992-07-01), Choi
patent: 5468986 (1995-11-01), Yamanashi
Nakanishi Shiro
Oda Nobuhiko
Ngo Ngan V.
Sanyo Electric Co,. Ltd.
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