Thin film transistor and liquid crystal display using the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257336, 257347, 257408, 257387, 349 43, 349 48, H01L 2701, H01L 2976

Patent

active

056939590

ABSTRACT:
A thin film transistor comprises a source region, a drain region and a channel region formed in a thin film silicon region on an insulating substrate and a gate electrode formed via a gate insulating film on the channel region; at least one of the source region and the drain region has a high-concentration impurity region and a low-concentration impurity region; the channel region is in contact with the low-concentration impurity region; the low-concentration impurity region comprises at least a first region and a second region; the first region comprises a thin film having about the same thickness as the channel region; the second region comprises a thin film having about the same thickness as the high-concentration impurity region which is thicker than the first region. A liquid crystal display has TFT substrates wherein the thin film transistors are arranged in the form of a matrix. A liquid crystal display is equipped with a plurality of the thin film transistors, wherein either of an electrode of the source region and an electrode of the drain region is connected to a transparent electrode.

REFERENCES:
patent: 4859618 (1989-08-01), Shikata et al.
patent: 5218232 (1993-06-01), Yuzurihara et al.
patent: 5242844 (1993-09-01), Hayashi
patent: 5250835 (1993-10-01), Izawa
patent: 5466961 (1995-11-01), Kikuchi et al.
Patent Abstracts of Japan, vol. 017, No. 453 (E-1417, Aug. 19, 1993 & JP 05 102483 A (Sharp Corp.), Apr. 23, 1993.
Patent Abstracts of Japan, vol. 018, No. 022 (E-1490), Jan. 13,1994 & JP 05 259457 A (Sharp Corp.) Oct. 8, 1993.
Minoru Matsuo et al: "Poly-Si TFTS With LDD Structure Fabricated At Low Temperature", Aug. 29, 1993, International Conference on Solid State Devices and Materials, pp. 437-439 XP000409416, p. 438, col.2; Fig. 4.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film transistor and liquid crystal display using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor and liquid crystal display using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and liquid crystal display using the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-804104

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.