Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-12-13
2005-12-13
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
06974972
ABSTRACT:
In a large-sized substrate for use in liquid crystal display devices, microcracks in a gate insulating film are prevented from being generated, whereby warpage of the substrate is suppressed. In order to solve the problems, in thin film transistors arrayed on a glass substrate, the gate insulating film is made thicker only in the portion that is directly under a gate line layer.
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Tanaka Hironori
Tsutsu Hiroshi
Flynn Nathan J.
Sefer Ahmed J.
Steptoe & Johnson LLP
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