Thin-film transistor and liquid crystal display device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

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Details

257435, 349 42, 349 43, H01L 29786, H01L 310392

Patent

active

060256079

ABSTRACT:
A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.

REFERENCES:
patent: 5371398 (1994-12-01), Nishihara
patent: 5410164 (1995-04-01), Katayama et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5650636 (1997-07-01), Takemura et al.

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