Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-05-05
2000-02-15
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257435, 349 42, 349 43, H01L 29786, H01L 310392
Patent
active
060256079
ABSTRACT:
A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.
REFERENCES:
patent: 5371398 (1994-12-01), Nishihara
patent: 5410164 (1995-04-01), Katayama et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5650636 (1997-07-01), Takemura et al.
Goto Yuugo
Ohori Tatsuya
Takei Michiko
Zhang Hongyong
Jackson, Jr. Jerome
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Thin-film transistor and liquid crystal display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin-film transistor and liquid crystal display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film transistor and liquid crystal display device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1907783