Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-07-31
2011-11-29
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S040000, C257S052000, C257S059000, C257SE51024, C257SE33004
Reexamination Certificate
active
08067770
ABSTRACT:
A thin film transistor includes a channel layer including an amorphous 12CaO.7Al2O3(C12A7) and a flat panel display device including the same. According to the present invention, the amorphous channel layer can be formed at a low temperature using C12A7. The thin film transistor including the amorphous channel layer has excellent electron mobility.
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Kamiya et al. (“Field-Induced Current Modulation in Nanoporous Semiconductor, in Electron-Doped 12CaO-7Al2O3” Chemical Materials, vol. 17, Nov. 25, 2005).
Kamiya, Toshio et al. “Field-Induced Current Modulation in Nanoporous Semiconductor, Electron-Doped 12CaO•7AlO.”Chemistry of Materials. 2005, vol. 17. 8 pages.
Hideo Hosono, “Recent progress in transparent oxide semiconductors: Materials and device application”, Thin Solid Films, Elsevier-Sequoia S.A., Lausanne, CH, vol. 515, No. 15, Jan. 24, 2007, pp. 6000-6014, XP022212810.
Ha Jae-Heung
Kim Yong-Tak
Lee Jong-Hyuk
Song Young-Woo
H.C. Park & Associates PLC
Samsung Mobile Display Co., Ltd.
Warren Matthew E
LandOfFree
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