Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-11-26
1997-03-25
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, 257347, H01L 2904
Patent
active
056147287
ABSTRACT:
A thin film transistor is disclosed, which comprises a transparent insulating substrate, a gate electrode formed over the transparent insulating substrate, a gate insulating layer formed over the gate electrode in such a way that the gate electrode is overlaid with the gate insulating layer, a semiconductor layer having a source region, a drain region, and a channel region, the source region having an ohmic contact portion at least on the front surface thereof, the drain region having an ohmic contact portion at least on the front surface thereof, the ohmic contact portion being doped with impurities, the channel region being formed between the source region and the drain region, a source electrode made of a transparent electrical conductive film, the source electrode being disposed on the front surface of the source region, the source electrode being ohmic contacted to the front surface of the source region, and a drain electrode made of a transparent electrical conductive film, the drain electrode being disposed on the front surface of the drain region, the drain electrode being ohmic contacted to the front surface of the drain region.
REFERENCES:
patent: 4864376 (1989-09-01), Aoki et al.
Kabushiki Kaisha Toshiba
Prenty Mark V.
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