Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-10-17
2000-01-04
Wilczewski, Mary
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257344, 257401, 438166, 438286, 438595, H01L 2128, H01L 21336, H01L 2941, H01L 29786
Patent
active
06011276&
ABSTRACT:
A thin film transistor and a fabrication method thereof which are capable of increasing an ON/OFF current ratio and simplifying a fabrication process by eliminating a masking process. The thin film transistor includes a substrate, an active layer formed on the substrate, a gate electrode formed on the active layer and the substrate and having an opening portion inwardly extended from one edge surface thereof, an offset region formed in the active layer matching with the opening portion, and impurity regions formed within the active layer at both sides of the gate electrode.
REFERENCES:
patent: 5151374 (1992-09-01), Wu
patent: 5741718 (1998-04-01), Codama et al.
patent: 5741736 (1998-04-01), Orlowski et al.
patent: 5804837 (1998-09-01), Han et al.
Tanaka et al., "Characteristics of Offset-Structure Polycrystalline-Silicon Thin-Film Transistors", IEEE Electron Device Letters, vol. 9, No. 1, Jan. 1988, pp. 23-25
LG Semicon Co. Ltd.
Wilczewski Mary
LandOfFree
Thin film transistor and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and fabrication method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1074483