Thin film transistor and fabrication method for same

Details Thin film transistor and fabrication method for same Thin film transistor and fabrication method for same

2005-09-13

2005-09-13

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S359000

Reexamination Certificate

active

06943371

ABSTRACT:
A thin film transistor and a method for fabricating the same. The thin film transistor comprises a substrate and a patterned semiconductive layer formed on the substrate, wherein the semiconductive layer comprises a channel region and doped regions adjacent to the channel region. A gate insulating layer is formed on the above structure. A gate electrode is located on the gate insulating layer above the channel region. Source and drain electrodes are located on the gate insulating layer adjacent to the semiconductive layer. A dielectric layer having contact holes is formed on the above structure and a patterned conductive layer is formed on predetermined parts of the dielectric layer electrically connecting the doped regions to the source and drain electrode through the contact holes.

REFERENCES:
patent: 5612234 (1997-03-01), Ha
patent: 5913113 (1999-06-01), Seo
patent: 5953598 (1999-09-01), Hata et al.
patent: 6037195 (2000-03-01), Toriyama et al.
patent: 6534788 (2003-03-01), Yeo et al.

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