Thin film transistor and fabricating method thereof having patte

Details Thin film transistor and fabricating method thereof having patte Thin film transistor and fabricating method thereof having patte

1999-10-01

2000-12-26

Parker, Kenneth

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 41, 349 43, G02F 1136

Patent

active

061667854

ABSTRACT:
The present invention relates to a thin film transistor and a fabricating method thereof which is applied to a buried bus coplanar type TFT wherein the source and drain wires are located on a substrate. The present invention includes an insulated substrate, a source electrode and a drain electrode on the insulated substrate, a first insulating layer on the insulated substrate wherein the first insulating layer has a predetermined pattern, an active layer on the first insulating layer wherein the active layer has a source region, a channel region and a drain region, a second insulating layer covering the active layer, and a gate electrode on the second insulating layer over the channel region.

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