Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S059000, C257S079000, C257S316000, C348S030000, C348S450000, C348S486000
Reexamination Certificate
active
06903371
ABSTRACT:
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
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Abe Hironobu
Horikoshi Kazuhiko
Itoga Toshihiko
Kimura Yoshinobu
Ogata Kiyoshi
Hitachi , Ltd.
Nelms David
Nguyen Dao H.
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