Thin film transistor and display panel using the transistor

Details Thin film transistor and display panel using the transistor Thin film transistor and display panel using the transistor

1976-08-20

1977-08-02

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 23, 357 61, 357 63, 148186, H01L 2712

Patent

active

040400735

ABSTRACT:
A double gated thin film field effect transistor in which cadmium selenide is the semiconductor material. A thin layer of indium is provided on either side of the cadmium selenide conducting channel and after annealing enhances the transconductance of the device and reduces trapping of charge in the semiconductor. The source and drain contacts of the device are a combination of an indium layer and a copper layer which improve the performance of the device.

REFERENCES:
patent: 3289053 (1966-11-01), Haering
patent: 3289054 (1966-11-01), Haering
patent: 3304469 (1967-02-01), Weimer
patent: 3512041 (1970-05-01), Dalmarso
patent: 3598760 (1971-08-01), Nakamura
patent: 3735212 (1973-05-01), Kun

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