Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-09-25
2007-09-25
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000
Reexamination Certificate
active
10827326
ABSTRACT:
A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein, wherein a voltage is applied to the channel region to discharge hot carriers generated in the channel region.
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Search Report issued in European Patent Application No. 04090168.8 on Jan. 25, 2006.
Bae Sung-Sik
Choi Byoung-Deog
Kim Won-Sik
Crane Sara
Samsung SDI & Co., Ltd.
Stein, McEwen & Bui LLP
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