Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-05
1997-10-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, H01L 29786, H01L 2904
Patent
active
056775474
ABSTRACT:
Improved thin film transistors resistant to static electricity induced line faults are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional layer formed between crossing source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors or at a display capacitor.
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Kodaira Toshimoto
Mano Toshihiko
Oshima Hiroyuki
Jackson Jerome
Seiko Epson Corporation
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