Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-02-05
1994-11-15
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 71, 257 72, 359 59, H01L 2904, H01L 2713, H01L 2978
Patent
active
053650794
ABSTRACT:
Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.
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Hayama et al., "Amorphous-Silicon thin-film metal-oxide-semiconductor transistors," Appl. Phys. Lett. 36(9), May 1, 1980, pp. 754-755.
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M. Hosokawa et al., Dichroic Guest-Host Active Matrix Video Display, Biennial Display Research Conference Paper 11.6 (1980).
Kodaira Toshimoto
Mano Toshihiko
Oshima Hiroyuki
Jackson Jerome
Seiko Epson Corporation
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