Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S061000, C257SE33004
Reexamination Certificate
active
07968880
ABSTRACT:
To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 5101242 (1992-03-01), Ikeda et al.
patent: 5221631 (1993-06-01), Ikeda et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5514879 (1996-05-01), Yamazaki
patent: 5614732 (1997-03-01), Yamazaki
patent: 5701167 (1997-12-01), Yamazaki
patent: 5849601 (1998-12-01), Yamazaki
patent: 5859445 (1999-01-01), Yamazaki
patent: 6011277 (2000-01-01), Yamazaki
patent: 6023075 (2000-02-01), Yamazaki
patent: 6153893 (2000-11-01), Inoue et al.
patent: 6252249 (2001-06-01), Yamazaki
patent: 6281520 (2001-08-01), Yamazaki
patent: 6306213 (2001-10-01), Yamazaki
patent: 6468839 (2002-10-01), Inoue et al.
patent: 6737676 (2004-05-01), Yamazaki
patent: 7067844 (2006-06-01), Yamazaki
patent: 7098479 (2006-08-01), Yamazaki
patent: 7115902 (2006-10-01), Yamazaki
patent: 7786485 (2010-08-01), Dairiki et al.
patent: 2005/0115930 (2005-06-01), Tanaka et al.
patent: 2007/0018165 (2007-01-01), Yamazaki
patent: 2009/0218572 (2009-09-01), Dairiki et al.
patent: 0 383 743 (1990-08-01), None
patent: 0 535 979 (1993-04-01), None
patent: 0652595 (1995-05-01), None
patent: 1 537 938 (2005-06-01), None
patent: 2-218166 (1990-08-01), None
patent: 4-242724 (1992-08-01), None
patent: 5-129608 (1993-05-01), None
patent: 7-131030 (1995-05-01), None
patent: 2001-053283 (2001-02-01), None
patent: 2005-049832 (2005-02-01), None
patent: 2005-191546 (2005-07-01), None
Dairiki Koji
Godo Hiromichi
Ikeda Takayuki
Inoue Takayuki
Kawae Daisuke
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Tran Thien F
LandOfFree
Thin film transistor and display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor and display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor and display device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2742656