Thin film transistor and active matrix liquid crystal display de

Details Thin film transistor and active matrix liquid crystal display de Thin film transistor and active matrix liquid crystal display de

1993-06-09

1995-05-16

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257349, 359 59, H01L 2701

Patent

active

054163404

ABSTRACT:
Leakage current due to light incident upon the semiconductor layer which forms the channel of a TFT is eliminated. An insulating layer is formed between one of source and drain electrodes and the semiconductor layer over a distance which is longer than a hole-electron recombination distance, from all the edges of at least one of the source and drain electrodes of the TFT so that it overlaps the semiconductor layer.

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patent: 5187551 (1993-02-01), Shoji et al.
patent: 5191451 (1993-03-01), Katayama et al.

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