Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-04-11
2006-04-11
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000
Reexamination Certificate
active
07026649
ABSTRACT:
A thin film transistor and an active matrix flat panel device. By forming a conductive material layer having multiple profiles, critical dimension (CD) bias is reduced and step coverage is enhanced. The thin film transistor includes the conductive material layer formed on an insulating substrate, wherein the conductive material layer is composed of at least one thin film transistor conductive material layer, and an edge portion of the conductive material layer is composed of multiple profiles with multiple edge taper angles.
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Im Choong-Youl
Jeong Chang-Yong
Kang Tae-Wook
Christie Parker and Hale, LLP
Munson Gene M.
Samsung SDI & Co., Ltd.
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