Thin film transistor

Details Thin film transistor Thin film transistor

1995-03-21

1997-07-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 37, 257 64, 257287, 257317, 257365, 257366, H01L 2701, H01L 2978

Patent

active

056441460

ABSTRACT:
A thin film transistor comprises a dielectric substrate (1), a semiconductor layer (3) of poly-crystalline silicon layer having a drain region (8), an active gate region (4, 8-0), and a source region (7) placed on said substrate (1), a drain terminal (10) and a source terminal (10A) connected to said respective regions for external connection, a gate electrode (6) coupled with a part of said gate region (4) through a dielectric layer (4A), wherein length (d) of said gate electrode (6) is shorter than the length of gate region (4 plus 8-0), so that an offset region (8-0), where no gate electrode faces with said gate region, is produced.

REFERENCES:
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5329140 (1994-07-01), Sera
patent: 5420048 (1995-05-01), Kondo
patent: 5434127 (1995-07-01), Nakamura et al.
patent: 5475238 (1995-12-01), Hamada
"Characteristics of Op Amps Using Polycrystalline Silicon thin Film Transistors", Nakamura et al, Institute of Electronics, Information and Communication of Japan, Autumn General Meeting 1990, C-549.

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