Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-03-24
1994-10-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, 257 72, 257506, 257752, 257761, H01L 2701, H01L 2713, H01L 2978
Patent
active
053529073
ABSTRACT:
A thin-film transistor includes a gate electrode and a semiconductor film consisting of amorphous silicon, formed on an insulating substrate to oppose each other through a gate insulating film, ohmic contact layers composed of n-type amorphous silicon doped with an impurity, electrically insulated from each other on the semiconductor film, and electrically connected to the semiconductor film, and source and drain electrodes arranged on the semiconductor film with a predetermined gap to form a channel portion, and electrically connected to the semiconductor film through the ohmic contact layers. The gate electrode and a portion surrounding the gate electrode are entirely formed into a continuous metal oxide film by a chemical reaction.
REFERENCES:
patent: 4404578 (1983-09-01), Takafuji et al.
patent: 5036370 (1991-07-01), Miyago et al.
Ishii Hiromitsu
Konya Naohiro
Matsuda Kunihiro
Casio Computer Co. Ltd.
Crane Sara W.
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